Abstract
A deep level transient spectroscopy (DLTS) study of defects found in float-zone p-type silicon exposed to a DC hydrogen plasma is reported. DLTS measurements of these samples revealed three deep levels. Two of the levels are broad, with E T– E V in the range 0.34–0.39 eV (H2) and 0.40–0.44 eV (H3); these appear as bands in the Arrhenius plot. The third level has an activation energy of 0.09 eV (H1). The variations in the capture cross-sections of H2 and H3 are believed to be strain-related. The concentration of H3 exceeds the other two levels and decreases rapidly into the samples with ∼10 15 cm −3 at a depth of 0.20 μm. H3 is tentatively ascribed to an extended defect.
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