Abstract
Experiments on proton irradiation with energy of 150 KeV, 8 MeV and 1 GeV were made. Capacitance–voltage characteristics measured at 650 K showed that 8 MeV and 1 GeV proton irradiation of 6H-SiC leads to an increase of uncompensated donor concentration. However, donor concentration in 6H-SiC remains unaffected after 150 keV proton irradiation. Deep centers were investigated by deep levels transient spectroscopy (DLTS). Results of C–V measurements are interpreted using DLTS data. The results obtained show the possibility of uzing proton irradiation for producing local high-resistance regions in SiC devices not intended for high-temperature applications.
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