Abstract
This paper reports on a Deep Level Transient Spectroscopy (DLTS) study of both oxygen-related thermal donors (OTDs) and radiation-induced defects (RDs) formed in high-temperature 1 MeV electron irradiated n-type Czochralski silicon. The heating of Si samples is done in-situ by the electron beam. The formation of deep levels is studied on both heat-treated and irradiated at high temperature sides of samples. The interaction between OTDs and RDs is investigated. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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