DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors

Abstract

n-Type epitaxial silicon layers of different thickness and resistivity, grown on highly Sb doped CZ-substrate by ITME (Warsaw), and n-type MCz silicon supplied by Okmetic (Finland) were used for the processing of planar diodes at CiS (Erfurt). For the epi-diodes a standard as well as a diffusion oxygenation process was employed. Irradiations had been performed with 26 MeV protons at the cyclotron of the Karlsruhe University and with neutrons at the TRIGA reactor of the Ljubljana University. Microscopic investigations using the DLTS method were done. The correlation of the IO 2 i -defect and the oxygen concentration was studied by a depth-profile measurement. The annealing behavior of the IO 2 i -defect at different temperatures was investigated and the activation energy extracted.