Abstract
This paper reports for the first time the interface properties of deposited polysilicon-Si02 - Ge02 - Ge structures suitable for multielectrode CCD fabrication. The interface properties of Germanium Polysilcon - Insulator - Semiconductor structures have been studied using the Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS) method. The surface state density ranged from 5·1010 to 1011 cm−2ev−1 near midband to 1012 cm−2ev−1 near the valence band edge. Slow states measured by a constant flatband technique were typically a factor of five to ten higher at the same gap energy. Discrete levels have also been observed at temperatures of 80K, 105K and 190K. By varying the sampling times, the activation energy and cross section of these states were obtained. Broad peaks observed at 239K and 278K, are tentatively associated with minority carrier emission and capture processes.
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