Abstract
Electron escape from self‐assembled InAs quantum dots (QDs) in GaAs is studied. We apply constant capacitance deep level transient spectroscopy (CC‐DLTS) to investigate the electric field dependence of the activation energies. As a major advantage for interpretation of the results in contrast to conventional DLTS the electric field of the quantum dot layer remains constant in CC‐DLTS experiments. The results of conventional DLTS results are well reproduced.
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