Abstract
Deep level transient spectroscopy (DLTS), capacitance-voltage ( C- V) and current-voltage ( I- V) techniques are employed to investigate ultrahigh-vacuum (UHV) prepared n-GaAs(110)-Au Schottky diodes. These diodes are prepared on cleavage planes of GaAs (LEC) by evaporation of Au in UHV. All subsequent measurements are performed without breaking the UHV. Samples with “ideal” surfaces show no detectable amount of deep traps (less than 10 13 cm −3). Samples with stepped surfaces show a deep electron trap 0.3 eV below E C ( N T = 2 × 10 15 cm −3) with characteristics of the EL6-center.
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