Abstract
In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼104 cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
