Abstract
Photobleaching of self-trapped holes (STH) in low temperature UV-irradiated silica glass has been investigated by the electron spin resonance method. The bleaching time dependence of the decay of two kinds of STH, STH1, and STH2, could be well fitted by the stretched exponential function, and STH2 has a quicker decay than STH1. On the other hand, the decay becomes significant large when the photon energy increases from 1.5to2.0eV, and then keeps constant with a further increase of photon energy. The distributions of the STH continuums are estimated at the positions on top of the valence band, being 1.66±0.27eV for STH1 and 1.63±0.33eV for STH2. A possible recombination mechanism is proposed to explain the decay of STH signals.
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