Abstract
Diffusion profiles of substitutional nickel atoms in dislocated silicon crystal are investigated using deep-level transient spectroscopy (DLTS). The profiles are analyzed on the basis of the theory of the dissociative mechanism of diffusion. It is found that dislocations play an important role as the sinks and sources of vacancy annihilation and generation, respectively, giving rise to the flat distribution of the U-shaped distribution observed in the crystal bulk.
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