Abstract
Thin films of the relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) on Pt/Ti/SiO2/Si (Pt/Si) substrates both with and without a Pb(Zr0.52Ti0.48)O3 (PZT) interfacial layer were investigated. Perovskite and pyrochlore coexistence was observed for PMN-PT thin films without a PZT interfacial layer. Interestingly, most of the pyrochlore phase was observed in single-coated films and in the first layer of multi-coated films. The pyrochlore phase exhibited grains with an average size of about 25nm, which is smaller than those of the perovskite phase (about 90nm). In contrast, for PMN-PT thin films grown on a PZT interfacial layer, the formation of a pyrochlore phase at the interface between PMN-PT layers and the substrate is completely suppressed. Moreover, small grains are not observed in the films with a PZT interfacial layer. The measured polarization-electric field (P-E) hysteresis loops of PMN-PT films with and without PZT layers indicate that enhanced electrical properties can be obtained when a PZT interfacial layer is used. These enhanced properties include an increase in the value of remanent polarization Pr from 2.7 to 5.8μC/cm2 and a decrease in the coercive field Ec from 60.5 to 28.0kV/cm.
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