Abstract
Nd 3+-doped Y 3Al 5O 12 single crystal has been grown by the horizontal directional solidification (HDS) method. The crystal structure was determined by X-ray diffraction analysis, and the relatively small FWHM of the [111] symmetric rocking curve demonstrated the good crystallinity of the crystal. The distribution of Nd 3+ ions was studied by the inductively coupled plasma atomic emission spectrometry (ICP-AES) method and the segregation coefficient was 0.234. The Nd 3+ions distribution along the [111] growth axis well agreed with the general distribution equation: C s = C m K 0 ( 1 − g ) K 0 − 1 , and the concentration of Nd 3+ ions along the thickness and width direction (perpendicular to [111] growth axis) was near unity. The absorption and emission spectroscopy results indicated that the crystal had excellent laser optical quality for InGaAs diode-laser pumping.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
