Distribution of excess charge carriers in bilateral macroporous silicon with the same thickness of porous layers

Abstract

In this work, to calculate the distribution of the excess minority carrier concentration in bilateral macroporous silicon, the solution of the diffusion equation for stationary conditions is used, which is written for a monocrystalline substrate and macroporous layers. The solution to the diffusion equation is supplemented by boundary conditions at the interface between macroporous layers and a monocrystalline substrate and at the boundaries of a bilateral macroporous silicon sample. The dependence of the distribution of the excess minority carrier concentration in bilateral macroporous silicon with the same thickness of porous layers on the depth of macropores, the thickness of the sample of bilateral macroporous silicon, and the bulk lifetime of minority charge carriers is calculated. It is shown that the distribution function of the excess minority carrier concentration in bilateral macroporous silicon exhibits two maxima. The maxima are located in the frontal macroporous layer, near the surface of the sample, and in a monocrystalline substrate, near the interface, the frontal macroporous layer - monocrystalline substrate.