Abstract
The electrical properties of Mg-implanted GaAs have been studied in detail using the van der Pauw technique. Mg ions were implanted in Cr-doped semi-insulating GaAs at 120 keV to doses of 1×1013–3×1015/cm2 at room temperature. The implanted samples were annealed with rf-plasma-deposited Si3N4 encapsulants at temperatures ranging from 600 to 850 °C. p-type layers have been produced for all dose levels. The maximum electrical activation occurred at an annealing temperature of 750 °C for all except the lowest dose of 1×1013/cm2. An electrical-activation efficiency as high as 85% was obtained for the sample implanted to a dose of 3×1013/cm2 and annealed at 750 °C. The dopant profiles were very sensitive to annealing temperature and ion dose, broadening significantly at or above 750 °C. Double peaks in the depth profiles have been observed for doses of ?1×1014/cm2, and the maximum carrier concentration obtained was as high as 2×1019/cm3.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
