Abstract
The density of states (DOS) and local density of states (LDOS) for an amorphous photonic material (APM) with a finite size and constructed by hexagonal basic cells are simulated. It is found that there is a frequency interval in which the total DOS is very small, i.e., a photonic gap exists. Near the gap-center frequency, the LDOS drops rapidly from the edge to the center area of the sample. However, at the gap-edge frequency, some discrete spots with high LDOS spread in the sample and corresponding electric field distributions show the occurrence of localized modes. This phenomenon can be attributed to the disordered distribution of the scatterers.
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