Abstract
The results of a detailed investigation of the distribution coefficient of carbon in GaAs are reported for a series of crystals grown at different pulling rates by the liquid-encapsulated Czochralski method. From localized vibration mode absorption measurements, it was found that the concentration of carbon always decreases along the length of the ingots and that the effective distribution coefficient increases strongly with a decrease in pulling rate. The equilibrium distribution coefficient determined from present data, K0=3.5, is higher than previously reported values for the effective distribution coefficient; however, it is consistent with chemical trends for group IV elements in GaAs.
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