Abstract
This paper presents a distributed matching network design method for the realization of broadband high-efficiency power amplifiers (PAs). Source-pull and load-pull simulations are employed to determine the optimal input and output impedances of a GaN transistor across 0.3–2.3 GHz. With the optimal source and load impedances across the desired bandwidth, the proposed method can be used to compute and optimize the distributed matching network directly without requiring close-form initial element values. This method will enable a PA to achieve high power added efficiency (PAE) over an ultra-wide bandwidth. A low-pass matching network is applied to implement the optimal impedances over the band. The measured results of the PA indicate a power gain of better than 10 dB and a typical output power of 20 W. The PAE is 59%–69% across a 153% bandwidth. The measurement demonstrates the excellence of the proposed method.
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