Abstract
A new distributed electro-thermal model has been developed in order to analyze electrical and thermal mappings of power devices during critical operations. The model is based on dividing power device into a vertical multilayer structure, with each layer discretized into multiple slab volumes. This model has been used to evaluate the effects of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. Dynamic latch-up failures during short-circuit operations has been investigated.
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