Abstract
A distortion measurement in a region close to the interface between different materials in LSI is performed using a convergent beam electron diffraction (CBED) pattern. Split higher-order Laue zone (HOLZ) lines emerge in the CBED pattern so that a stressing region is observed close to the interface. The calculation method of the split HOLZ lines based on kinematical approximation with the sample's deformation model well reflects the experimental results. As a result of split HOLZ line analysis using the present method, it is found that there is distortion depending on the external form of a multi-finger transistor.
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