Abstract
A metrology has been developed to evaluate the distortion of large area stencil masks under ion beam exposure. In an ion projector an ion beam proximity printing was performed with a 85 mm diameter beam of 7.5 keV Helium ions. The gap between Nickel stencil test mask and silicon wafer was 2 mm. Ion beam exposure was done into the surface of 0.8 μm thick AZ-5206 resist with subsequent UV blanket exposure and image reversal development. The Leitz LMS-2000 registration measurement system provided data of the resist pattern to analyse the stencil mask distortion within 25 nm precision and 50 nm accuracy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have