Dissolution dynamics of poly(4-hydroxystyrene-co-methacrylic acid) in tetraalkylammonium hydroxide aqueous solutions

Abstract

Resist materials and their lithography processes are essential for achieving further miniaturization in semiconductor microfabrication. In the sub-20 nm half-pitch region, the development process becomes particularly important due to the occurrence of stochastic defects (pinching and bridging). However, the details of dissolution dynamics are still unclear. In this study, we investigated the dissolution dynamics of poly(4-hydroxystyrene-co-methacrylic acid) (PHSMA) films in tetraalkylammonium hydroxide (TAAH) aqueous solutions using a quartz crystal microbalance method. PHSMA is a typical backbone polymer used in extreme UV lithography. For poly(4-hydroxystyrene) films, it has been reported that the dissolution mode changed when the alkyl chain length of TAAH increased. However, the mode change was not observed for PHSMA films. This difference is considered to be caused by the formation of thick transient swelling layers of PHSMA films owing to the fast water intake and the molecular interaction of the hydroxyl groups of hydroxystyrene units.