Abstract
A three-mode microwave afterglow apparatus has been used in conjunction with a high-speed grating spectrometer to study the variation with electron temperature of the recombination coefficient ..cap alpha.. (Xe/sub 2/ /sup +/) and of the Xe* excited states produced by dissociative recombination over the range 300 < or = T/sub e/ < or = 8000 K. At low electron temperatures, 300--700 K, ..cap alpha.. (Xe/sub 2/ /sup +/) varies approximately as T/sub e//sup -1///sup 3/, with a smooth transition to a approx.T/sub e//sup -0//sup .//sup 7/ variation at higher electron temperatures, 1300--7400 K. At T/sub e/ = T/sub +/ = T/sub n/ = 300 K, ..cap alpha.. (Xe/sub 2/ /sup +/) = (2.3 +- 0.2) x 10/sup -6/ cm/sup 3//sec, in agreement with earlier studies at room temperature. At thermal energy (300 K) Xe* excited states up to but not exceeding the energy of the Xe/sub 2/ /sup +/ ion in its ground electronic and vibrational state are observed. With microwave heating to T/sub e/ approx. 8000 K additional, higher-lying Xe* states (up to approx.0.6 eV above the Xe/sub 2/ /sup +/ ion ground state) are produced by the dissociative recombination process. (AIP)
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