Abstract
Abstract The separation of Shookley partial dislocations in Si and Ge has been measured for dislocations at and near screw orientation using the weak-beam method of electron microscopy. The separations appear to fall into two categories. The first category has dissociations which agree with those expected from previous measurements for dislocation orientations above 30°, and the stacking fault between the partials is intrinsic in character. The second category has dissociations which are wider than those in the first category, and the stacking fault is extrinsic in character. A model to explain these observations is proposed.
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