Abstract
We report on alpha and neutron irradiation of 7.8 μm single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers introduced by radiation. Defects are studied as a function of temperature and electrical stress, with live acquisitions evidencing large amounts of short-term annealing of the damage, and sometimes also random telegraph signal. Average damage factors and defect activation energies are consistent with a large field-enhancement of carrier generation. Since some radiation-induced defects lead to out-of-spec behavior, the implications for the reliability of SPAD-based systems are also discussed, by projecting the associated terrestrial failure rates.
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