Abstract
An attempt is made to derive the two-dimensional electron dispersion relations in n-channel inversion layers on A3 11B2 V semiconductors under both the weak and strong electric field limits, by including various anisotropies in the energy band structure within the framework of the k • p formalism. In addition, the corresponding well known results of the isotropic two-band Kane model are also obtained from our generalized results under certain limiting conditions.
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