Abstract
Development of gallium oxide-based devices is one of the most promising areas of modern electronic technology. The method of ion implantation is widely used in electronic engineering; however, it has not yet been sufficiently studied for gallium oxide from a physical point of view. One of the interesting questions is the possible impact of surface orientation of β-Ga2O3 single crystals on the structural damage upon ion irradiation. In this work, the effect of Si+ ion irradiation on the structural properties of β-Ga2O3 crystals with (−201) and (010) surface orientations has been investigated by X-ray diffraction and small-angle reflection electronography. It is established that mechanical stresses in the irradiated layer depend on surface orientation: in the case of (−201) orientation, the stress in lateral to the surface direction is compressive, while it is tensile for the (010) orientation. At one and the same irradiation dose, the degree of damage for (010) orientation is shown to be stronger than that for (−201). Possible explanation is suggested for the surface orientation effect.
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