Abstract
The coherent potential approximation and a k.p alloy Hamiltonian are used to provide a detailed analysis of the influence of disorder scattering on the zone-centre band structure and the electron mobility in II-VI semiconductor alloys. The weak-scattering approximation to the electron mobility is shown to apply to the common II-VI alloys. The effect of alloy disorder on the zone-centre band structure of a zero-gap alloy is examined. The total electron mobility in the mixed-crystal system Hg1-xCdxTe is evaluated, and the relative strength of disorder scattering in comparison with other scattering mechanisms is assessed, for a range of impurity concentration and alloy composition.
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