Abstract
Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs 1− x P x , Ga x In 1− x As, Ga x Al 1− x As, Ga x In 1− x P, and GaSb 1− x P x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp 3 s ∗ bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb 1− x P x . In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs 1− x P x , of moderate importance for Ga x In 1− x As and Ga x Al 1− x As, and relatively large for Ga x In 1− x P. However, such effects are found to be significant for GaSb 1− x P x , with this alloy predicted to be in the strong scattering regime.
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