Abstract
It is widely believed that high-kinetic-energy (>1 keV) recoils in crystalline Si result in the formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated point defects. Here we study the response of a Si crystal using dynamical density-functional calculations and show that recoils of much less than 1 keV result in highly disordered regions that persist for hundreds of femtoseconds. Therefore, beam-induced defect formation is controlled by recrystallization processes during dynamic annealing even following low-energy ion implantation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
