Disorder-Induced Degradation of Vertical Carrier Transport in Strain-Balanced Antimony-Based Superlattices

Abstract

We investigate carrier transport in gallium-free strained-balanced $\mathrm{In}\mathrm{As}/{\mathrm{In}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}\mathrm{Sb}$ type-II superlattices in the presence of positional and compositional disorder. We use a rigorous nonequilibrium Green's function model based on fully nonlocal scattering self-energies computed in the self-consistent Born approximation and a multiband description of the electronic structure. Layer-thickness fluctuations, nonuniform antimony composition, and segregation throughout the superlattice stack lead to as-grown disordered structures that are quite different from the abrupt interface ideal superlattices. We find that regardless of its nature and cause, disorder significantly affects vertical-carrier-transport properties, by impeding the coherent propagation of carriers in the minibands. In particular, the minority-carrier hole mobility is fundamentally limited by the nonideal properties of the superlattice, namely the layer-thickness fluctuation and the nonuniform antimony distribution. Furthermore, upon reducing the temperature, holes become fully localized and transport occurs by hopping, which explains published measured detector data that demonstrates the quantum efficiency, exhibiting a very strong temperature dependence that degrades as the temperature is reduced. As a result, photodetectors that employ holes as minority carriers will be limited in performance, especially for long-wavelength infrared applications at low temperature. However, we find that minority-carrier electron mobility is largely unaffected by disorder, indicating the $p$-type absorbing layer as the preferred option.