Abstract
We have studied undoped and N-doped 6H-SiC in its pristine and swift heavy ion (SHI) irradiated (150 MeV Ag12+ ions) forms by impedance spectroscopy at low temperatures. Fitting analysis of the complex impedance spectra reveals two time constants (R1Q1 and R2Q2) for the irradiated samples and single time constant (R1Q1) for the pristine undoped and N-doped samples. This indicates a decrease in the grain interior conductivity (σdc) for the irradiated undoped 6H-SiC and an increase for the N-doped samples. The increased conductivity in the irradiated N-doped samples is due to the possibility of defect trapping and by the defect. The Activation energy (Ea) exhibited an increase in the undoped samples and decrease in the N-doped samples. The σdc and the Ea results suggest that the (de-)trapping effect on the defect states is significant in the irradiated samples. Furthermore, the impedance results support the formation of homogenous/heterogeneous defect structures in the irradiated samples. Impedance studies also reveals the disappearance of the charge carriers due to the (de-) trapping at the defect states at damage zone interface (DZI). The presence of disorder and the nature of the disorder are discussed.
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