Abstract
In this report, the effect of disorder accumulation in Swift Heavy Ion (SHI) irradiated 6H-SiC is distinguished with respect to the irradiation temperature, viz., 80K and 300K. The samples were irradiated with 150MeVAg12+ions with different fluences ranging from 1×1012 to 5×1013ions/cm2. The structural and optical properties of N-doped 6H-SiC in its pristine condition and after SHI irradiation have been studied. The changes observed by Raman spectroscopy and Time resolved photoluminescence (TRPL) spectroscopy were ascribed to the disorder accumulation in 6H-SiC. The local disorder has been analyzed by studying the LO Raman mode of the irradiated sample in comparison to the pristine sample. The TRPL studies have provided evidence of the formation of radiative centers after irradiation at 80K.
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