Abstract
Thin films of Si:H:N alloys were prepared by r.f. glow-discharge in a SiH 4ArN 2 mixture. The nitrogen content of the films was controlled through the r = N 2/SiH 4 gas molar ratio. Film parameters usually related to disorder were studied, such as the activation energy of the photoconductivity and the optical absorption edge. The results suggest that disorder increases with nitrogen incorporation, in agreement with a steep decrease in the photoresponse of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
