Dislocations in Relaxed SiGe/Si Heterostructures

Abstract

Recent advances in the understanding and control of threading dislocations in substantially relaxed SiGe buffer layers on Si are presented. A model for threading dislocation flow in relaxed graded SiGe buffers is used to determine the potential lower limit of threading dislocation density in relaxed SiGe buffers. Greater densities than expected from the model are seen in relaxed graded alloys with final concentrations greater than 50%. We show that the culprits of the higher threading dislocation density are threading dislocation pile-ups. Observation of early development of pile-ups confirms that inhomogeneous misfit dislocation densities in the graded buffer form regions of more severe crosshatch on the surface that impede dislocation flow. By using chemomechanical planarization (CMP), deleterious pile-up formation can be avoided, and previously formed pile-ups can be destroyed by regrowth of a graded layer. Experiments with CMP and regrowth of graded layers suggest that dislocation annihilation can be effective at reducing threading dislocation densities to densities of the order expected by the model. High quality Ge on Si layers created with the CMP process were used as templates to grow high quality GaAs on Si with strong room temperature photoluminescence and record minority carrier lifetime.