Abstract
Dislocation arrangements resulting from the elaboration process of gas pressure sintered silicon nitride have been investigated by transmission electron microscopy. Dislocations with Burgers vector b = 1/3〈110〉 are found to be dissociated in a {110} prismatic plane. Structural features of the induced stacking faults are discussed. Furthermore, reactions between dislocations with Burgers vector b = 1/3[110], [0001], and 1/3[113] are observed. Stability calculations considering elastic anisotropy show that a reaction between dislocations with Burgers vectors b = [0001] and b = 1/3〈110〉 leading to a junction dislocation with Burgers vector b = 1/3〈113〉 is always possible.
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