Abstract
A novel etching technique using vaporized KOH to reveal various types of dislocations from the C-face of 4H-SiC has been proposed. Three different pit geometries have been observed, which can be attributed to three dislocation types commonly found in 4H-SiC. Pit positions on the Si-face and C-face have been compared to study the dislocation propagation behaviors across the sample thickness. Activation energy EA=49 kcal/mol has been obtained, indicating a surface-reaction-dominant process. This etching technique has provided an effective and inexpensive method of making inch-scale mapping of dislocation distribution for C-face epitaxial and bulky 4H-SiC.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
