Abstract
Dynamic characteristics of dislocations in several III - V compound semiconductors with sphalerite structure are compared with each other, especially focusing on the difference between those in GaAs and InP. Impurities give rise to a quite rich variety of effects on dynamic behavior of dislocations in these materials. The dislocation mobilities and the impurity effects are much different among different types of dislocations in the same material. Such differences among different types of dislocations differ from material to material. It is shown how the dynamic characteristics of various types of dislocations are reflected on the characteristics in macroscopic deformation of these materials.
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