Abstract
AbstractUndoped GaN layers with thickness of 278 µm were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0x106 cm–2 and 7.2x106 cm–2 were irradiated by electron‐beam with the energy of 1 MeV and dose of 1x1015 cm–2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron‐beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 eV. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
