Abstract
This paper investigates the effectiveness of multiple indium atomic planes in reducing the dislocation density in GaAs epitaxial layers grown by metalorganic molecular beam epitaxy on GaAs-coated Si substrates prepared by metalorganic chemical vapor deposition.In situ reflection high-energy electron diffraction patterns show that, during the growth of multiple indium atomic-plane structures, two-dimensional growth takes place. Cross-sectional transmission electron microscope observation shows that InAs sublayers are commensurate; hence the critical thickness of the InAs layer in this structure is more than one-monolayer. Cathodoluminescence examination indicates that the defect density decreases as the number (<60) of indium atomic planes increases. This new structure is more effective in dislocation reduction than conventional In0.1Ga0.9As/GaAs strained-layer superlattices.
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