Dislocation determination and quality control of industrial casting monocrystalline silicon

Abstract

By analyzing dislocation ratio data of casting monocrystalline silicon wafers and photovoltaic conversion efficiency of the fabricated solar cells and comparing analyzing growth height and dislocation ratio of silicon crystalline, we derived the calculation equation of dislocation growth in the vertical direction. According to this, the determination software for the dislocation area of casting monocrystalline silicon blocks has been developed, and we realized the adequate delineation and interception of serious dislocation area in casting monocrystalline silicon blocks. The batch conversion efficiency gap between the casting monocrystalline silicon and the Czochralski (CZ) monocrystalline silicon has been narrowed from 0.51 % to 0.19 %, and the low efficiency ratio of casting monocrystalline silicon cells has been reduced from 6.98 % to 0 %. Finally, the stability and competitiveness of casting monocrystalline silicon wafer products have been improved.