Simulation study on control characteristics of semiconductor grade monocrystalline silicon growth process

Abstract

The growth of Czochralski(CZ) monocrystalline silicon is a nonlinear dynamic time-varying system with complex physical changes and multi-field and multi-phase coupling. In order to meet the needs of information development, it is urgent to develop large-scale, high-quality monocrystalline silicon. However, it is extremely difficult to establish an accurate control system model. Therefore, this paper considers the complex physical changes of multi-field coupling and non-linear processes in the growth of CZ monocrystalline silicon, a lumped parameter model for the growth of monocrystalline silicon is established based on energy balance model, fluid mechanics model, and geometry model, according to the internal mechanism of the monocrystalline silicon growth and the transfer mechanism of internal material flow. According to the model, a CZ monocrystalline silicon growth simulation control system is established under the Matlab/Simulink environment, and the real-time simulation data of each state variable of crystal growth is obtained. So that the control characteristics of each state variable in the crystal growth process can be analyzed. Finally, the validity of the established model is checked by the records evaluation of the semiconductor industry production process. Finally, the validity of the established model is verified based on the data analysis of the semiconductor industry production process. The results show that the model has high accuracy and can better describe the dynamic behavior of the actual monocrystalline silicon growth system.