Abstract
Rutherford backscattering and channeling spectrometry (RBS/C) as well as transmission electron microscopy (TEM) are used to characterize the crystalline structure of a GaN layer grown on a Si (111) substrate. The channeling measurements are performed along the off-normal 〈12¯13〉 axis in the {101¯0} plane of the GaN layer. The threading edge dislocation defect density obtained from RBS/C is quantitatively compared to the results obtained from TEM. The strain is found not to be completely relaxed, eT≠0, in spite of the large thickness of the GaN layer (3.0μm), and in spite of the incorporation of various buffer layers.
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