Abstract
An MAOS (metal-aluminum oxide-silicon oxide-silicon) device shows a decrease in channel conductance and the instability of the threshold voltage during BT (bias-temperature) treatments or during writing and erasing operations (positive and negative high voltage applications respectively). The degradations are ascribed mainly to surface states formation at Si–SiO2 interface and partly to the nonuniform lateral charge distribution within the gate film. The nonuniformity has been estimated by an increase in the minimum capacitance value observed in the gate capacitance-voltage characteristics of an MAOS transistor. A comparison of the experimental data with the calculated values has revealed that the nonuniformity is not dominant in the degradations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
