Abstract
We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance transient measurements under strong light illumination. This new trap is shallower than the DX center associated with Si impurity in that its emission and capture activation energies are equal to 0.20±0.05 and 0.17±0.05 eV, respectively. Its maximum concentration is comparable to the concentration of the DX center. Possible origins of this new trap and its relationship to the DX center are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
