Abstract
In order to improve both the operating voltage and the memory coefficient (MC) of a protective layer for AC plasma display panels, controlled amount of ZrO 2 was added to the pure MgO. The effects of the ZrO 2 addition on both the electrical properties ( V f and V s) and the microstructure of the Mg 2−2 x Zr x O 2 films deposited by e-beam evaporation were investigated. As the [ZrO 2/(MgO+ZrO 2)] ratio of the protective materials increased, the oxygen content in films increased, and the relative ratio of (200)/(111) also increased with overall peak shifting to lower angular diffraction positions. The firing voltage of the MgO–ZrO 2 protective films, when the [ZrO 2/(MgO+ZrO 2)] ratio was 0.1, was 5% lower than that of the conventional MgO protective films with higher MC.
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