Abstract
The effect of strain on the metal-insulator transition (MIT) of the epitaxial NdNiO3 film on the c-axis oriented LaAlO3 single crystal, grown by pulsed laser deposition, has been investigated. Swift heavy ion irradiation was used to vary the strain state of the deposited film. X-ray diffraction confirmed a systematic fluence dependent rise in the in-plane compressive strain, while maintaining the epitaxy of the film. This in-plane compressive strain has been found to reduce the MIT temperature, which finally disappeared for the highest fluence of the irradiation. This is also corroborated with the Raman spectroscopy measurements which suggest that the ion irradiation induced stress is responsible for the suppression of the metal-insulator transition.
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