Abstract
An 8KV-1.2KA directly light triggered thyristor was successfuly developed by employing a defect density controlled new process and novel multi-stage amplifying gate structure. The 8KV-1.2KA units exhibit 2.8 volts on-state voltage at 4000A, minimum light triggering power of 1.5mW for 3KV/µs dv/dt capability and more than 300A/µs di/dt capability Turn-off time is less than 450µs. A more than fifteen to seventeen overdriving factor was also achieved, with an optimized light triggering system, consisting of novel press pack package and newly developed GaAlAs high power LED.
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