Abstract
Homogeneous and stoichiometric samples of InBi1−xSbx (x = 0, 0.1) crystals have been directionally solidified to explore their suitability for optoelectronic applications. Prior to the growth, the temperature distribution of an indigenously fabricated horizontal furnace has been analysed and optimized to conduct the growth experiments on the basis of phase diagram of the material. Systematic trials have been carried out for several growth runs (48, 60 and 72 h) by maintaining an axial temperature gradient of 4, 6 and 8 °C/cm with the aid of a temperature controller mechanism. The key parameters governing the growth mechanism, composition, phase, and structure of the grown InBi1−xSbx crystals were investigated via X-ray diffraction, scanning electron and atomic force microscopy, Raman and Fourier transform infrared spectroscopy. The presence of secondary phases was ruled out and the average congruent melting points of InBi and InBi0.9Sb0.1 samples were confirmed as 109.43 and 121.13 °C respectively, by employing differential scanning calorimetric analysis. Investigations on the optical, electrical and mechanical properties of these materials were carried out. Vickers microhardness was found to increase with the Sb incorporation. The average optical band gap computed from the IR transmission spectra was found to be 0.165 eV. The results obtained promise that InBi1−xSbx crystals grown by directional solidification are favourable candidates than those grown by other melt methods.
Published Version
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