Abstract

An organic chemical etch process based on tailoring the surface oxidation state was found to be effective in realizing directional etch of magnetic and noble metals for their integration and application in magnetoresistive random access memory devices. Using Pt, a noble metal, as a test case, plasma treatments with sulfur- and oxygen-based chemistries were able to oxidize Pt0+ to Pt2+ and Pt4+, which can be effectively removed by selected organic chemistries. The most effective control of the surface oxidation states of Pt was achieved with an O2 plasma, which was then applied with similar effectiveness to other transition and noble metals. By quantifying the reaction rate, the oxidation of transition metals (Fe and Co) was shown to follow an inverse log rate law, while that of noble metals (Pd and Pt) follows a parabolic rate law. This work highlights the importance of the surface oxidation states of magnetic and noble metals in enabling directional etch by organic chemistry.

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