Abstract
We describe the growth and characterization of InAs quantum dots on SiO2 patterned GaAs by metal organic chemical vapor deposition. Arrays of quantum dots with densities as high as 1.8×1010 cm−2 fabricated by electron beam lithography are demonstrated. A process consisting of dry and wet etching to minimize etch damage is developed. As the mask diameter increases, the nucleation transitions from single dots to multidot clusters. We achieve more uniform size and shape distributions of dots on patterned regions relative to unpatterned dots as revealed by structural characterization and room temperature photoluminescence emission spectra.
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